Chinese Scientists Make Breakthrough in Gallium Oxide Semiconductor Production
Chinese scientists have made significant strides in the production of gallium oxide semiconductors, a fourth-generation ultra wide band gap material with superior performance advantages. This breakthrough comes in response to the US ban on exporting advanced semiconductors, including gallium oxide, due to national security concerns.
Introduction: Semiconductors have undergone a remarkable evolution, from elemental materials like silicon and germanium to compound materials such as gallium arsenide and indium phosphide. More recently, wide-gap materials like silicon carbide and gallium nitride have emerged. Gallium oxide, known as a fourth-generation ultra wide band gap semiconductor, has gained attention for its ability to withstand strong electric fields, exhibit stable physical and chemical properties, and consume minimal power. Body:
US Ban on Gallium Oxide Semiconductor Exports
In August 2020, the US Commerce Department's Bureau of Industry and Security imposed an export ban on advanced semiconductors, including gallium oxide, citing national security concerns. The ban aimed to hinder China's participation in next-generation semiconductor competition but has proven ineffective.
Advantages of Gallium Oxide Semiconductors
Compared to widely used wide band gap materials like gallium nitride and silicon carbide, gallium oxide offers significant performance advantages. It allows semiconductors to operate under more severe conditions, such as higher voltages and temperatures, making devices that utilize these materials highly valuable in military applications.
Chinese Breakthrough in Gallium Oxide Semiconductor Production
Chinese scientists from Zhejiang University have made significant progress in the production of gallium oxide semiconductors. Led by Yang Deren, a member of the Chinese Academy of Sciences, the team has developed a self-developed approach that has resulted in the production of 4-inch wafers, an improvement from their previous 2-inch wafers. The team's process is simpler, more controllable, and cost-effective.
Solidifying Gallium Oxide from a Melt
Unlike other wide band gap semiconductor materials that are synthesized through vapor-phase methods, gallium oxide is unique in its ability to form single crystals by solidifying from a melt at standard atmospheric pressure. This characteristic helps reduce fabrication costs, making mass production more feasible.
Cost Reduction and Simplification of Production Process
The traditional method used in Japan and America involves a modeling approach that requires a large amount of iridium for the crucible. Yang's casting method reduces iridium usage by 80%, significantly lowering production costs. The process is also simpler and shorter, making it suitable for automated control and future industrialization.
Future Development and Commercialization
The Zhejiang University team has applied for multiple domestic and international patents and plans to further optimize their casting method. Additionally, a private firm in Beijing, MIG Semiconductor Company, has successfully produced 4-inch gallium oxide wafers and is building China's first integral production line for gallium oxide semiconductors. Conclusion: The breakthrough made by Chinese scientists in the production of gallium oxide semiconductors is a significant development in the semiconductor industry. With its superior performance advantages, gallium oxide has the potential to surpass other wide band gap materials like gallium nitride in the market. As China continues to invest in technological innovation and mass production, the global semiconductor landscape is poised for further transformation.